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https://hal-univ-pau.archives-ouvertes.fr/hal-03478169
Submitted on : Monday, December 13, 2021-6:55:46 PM
Last modification on : Monday, November 7, 2022-5:24:33 PM
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- HAL Id : hal-03478169 , version 1
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Yannick Dumollard, Emmanuel Batista, Jean-Marc Dienot, Laurent Pecastaing. Simulation methodology for considering delamination and bonding pullout in a SiC MOSFET chip during the short-circuit phase. 12th IEEE International Symposium on Power Electronics for Distributed Generation Systems, Jun 2021, Virtual, United States. ⟨hal-03478169⟩
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