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Equation-based modeling of electrothermal behavior of a SiC MOSFET chip during a short circuit

Yannick Dumollard Emmanuel Batista 1 Jean-Marc Dienot 2 Laurent Pecastaing 2 
1 Alstom Transport - Alstom Transport
2 SIAME - Laboratoire des Sciences de l'Ingénieur Appliquées à la Mécanique et au génie Electrique
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Conference papers
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https://hal-univ-pau.archives-ouvertes.fr/hal-03025998
Contributor : Antoine SILVESTRE de FERRON Connect in order to contact the contributor
Submitted on : Thursday, November 26, 2020 - 3:01:40 PM
Last modification on : Tuesday, February 2, 2021 - 2:40:03 PM

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  • HAL Id : hal-03025998, version 1

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UNIV-PAU | SIAME

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Yannick Dumollard, Emmanuel Batista, Jean-Marc Dienot, Laurent Pecastaing. Equation-based modeling of electrothermal behavior of a SiC MOSFET chip during a short circuit. IEEE Latin American Electron Devices Conference, 2020, San Jose, Costa Rica. ⟨hal-03025998⟩

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