Equation-based modeling of electrothermal behavior of a SiC MOSFET chip during a short circuit

Yannick Dumollard; Emmanuel Batista; Jean-Marc Dienot; Laurent Pecastaing

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Equation-based modeling of electrothermal behavior of a SiC MOSFET chip during a short circuit

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Yannick Dumollard

Function : Author

Emmanuel Batista

Function : Author

Alstom Transport

Jean-Marc Dienot

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PersonId : 988606

Laboratoire des Sciences de l'Ingénieur Appliquées à la Mécanique et au génie Electrique

Laurent Pecastaing

Function : Author
PersonId : 172478
IdHAL : laurent-pecastaing
ORCID : 0000-0002-1842-7403
IdRef : 060272007

Laboratoire des Sciences de l'Ingénieur Appliquées à la Mécanique et au génie Electrique

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Engineering Sciences [physics] Electric power Engineering Sciences [physics] Electronics Engineering Sciences [physics] Chemical and Process Engineering

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https://hal-univ-pau.archives-ouvertes.fr/hal-03025998

Submitted on : Thursday, November 26, 2020-3:01:40 PM

Last modification on : Monday, November 7, 2022-5:24:33 PM

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hal-03025998 , version 1 (26-11-2020)

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HAL Id : hal-03025998 , version 1

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Yannick Dumollard, Emmanuel Batista, Jean-Marc Dienot, Laurent Pecastaing. Equation-based modeling of electrothermal behavior of a SiC MOSFET chip during a short circuit. IEEE Latin American Electron Devices Conference, 2020, San Jose, Costa Rica. ⟨hal-03025998⟩

Equation-based modeling of electrothermal behavior of a SiC MOSFET chip during a short circuit

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