Influence of the sulfur vacancies on the electronic properties of In16Sn4S32

Rémi Dedryvère (1) , P.E. Lippens (2) , J.C. Jumas (2) , I. Lefebvre-Devos , C. Pérez Vicente

1 IPREM - Institut des sciences analytiques et de physico-chimie pour l'environnement et les materiaux
2 ICGM ICMMM - Institut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier

High and low temperature forms of In16Sn4S32 differ in color (black and orange-red, respectively) and lithium insertion properties. We have studied both forms by X-ray and neutron diffraction techniques and 119Sn Mössbauer spectroscopy. While diffraction techniques show no structural difference, Mössbauer spectra allow to differentiate both phases, as a consequence of the presence of SnI1 in the high-temperature form. We show from tight-binding calculations that both the differences in color and the tin oxidation states are related to the existence of sulfur vacancies in the local environment of the tin atoms. © 2001 Éditions scientifiques et médicales Elsevier SAS.

Domaines: Matériaux

Rémi Dedryvère, P.E. Lippens, J.C. Jumas, I. Lefebvre-Devos, C. Pérez Vicente. Influence of the sulfur vacancies on the electronic properties of In16Sn4S32. Solid State Sciences, 2001, 3 (3), pp.267-274. ⟨10.1016/S1293-2558(00)01137-7⟩. ⟨hal-01560711⟩